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LAPT
2SC3519/3519A
Application : Audio and General Purpose
(Ta=25C) 2SC3519 2SC3519A Unit
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) sAbsolute maximum ratings (Ta=25C)
Symbol 2SC3519 2SC3519A VCBO VCEO VEBO IC IB PC Tj Tstg 160 160 5 15 4 130(Tc=25C) 150 -55 to +150 180 180 Unit V V V A A W C C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=-2A VCB=10V, f=1MHz
sElectrical Characteristics
Symbol ICBO VCB= 160 160min Conditions
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
100max 180 100max 180min 50min 50typ 250typ
A
V
19.90.3
4.0
A
V V MHz pF
a b
o3.20.1
20.0min
4.0max
2.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
5.450.1 B C E
5.450.1
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 1 IB2 (A) -1 ton (s) 0.2typ tstg (s) 1.3typ tf (s) 0.45typ
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
0m
0 60 m A
VCE( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t)( V ) 3
I C - V BE Temperature Characteristics (Typical)
15 (VCE=4V)
15
A 70
500
mA
400
mA
300 mA
Collector Current I C (A)
10
2
Collector Current I C( A)
200m
A
10
10 0m A
p)
em
eT
as
50mA
(C
12
C
0
0
1
2
3
4
0
0
0.2
0.4
0.6
0.8
1.0
0
0
-30
25
1 Base-Emittor Voltage V B E( V)
C
IB=20mA
5A
5
(Ca
C
se
Te
5
1
5
mp
I C= 10A
)
2
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
(V C E= 4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 300
(VCE=4V)
j- a( C/W)
hFE - IC Characteristics (Typical)
hFE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
3
125C 100 25C 50 -30C
100
Transient Thermal Resistance
1 0.5
Typ
50
10 0.02
0.1
0.5
1
5
10 15
10 0.02
0.1
0.5
1
5
10 15
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(V C E= 12V) 80 40
Safe Operating Area (Single Pulse)
130
10 ms
P c - T a Derating
10 Cut-o ff F reque ncy f T( MH Z) 60 Co lle ctor Cu rre nt I C( A)
M aximum Power Dissipa ti on P C( W)
Typ
5
DC
100
W ith In fin ite he
40
at
1 0.5 Without Heatsink Natural Cooling 1.2SC3519 2.2SC3519A 0.1 1 2 200
si nk
50
20
Without Heatsink 3.5 0 0 25 50 75 100 125 150
0 -0.02
-0.1
-1
-5
-10
0.05 5
10
50
100
Emitter Current I E( A)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
66

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